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KRI Ion Sources
KRI Ion Sources
System Overview
Developed by Dr. Kaufman
KRI Ion Sources for everything from cleaning to thin film deposition
We sell and install KRI ion sources from the United States, developed by Dr. Kaufman. Compatible with a wide range of applications such as cleaning, sputtering, and etching.
The Kaufman Ion Source and Dr. Harold Kaufman
At the core of our ion beam system is the Kaufman-type ion source, a technology shaped by one of the field’s most influential figures, founder Dr. Harold Kaufman.
Dr. Harold Kaufman
Building on his research at NASA, Dr. Kaufman developed the Kaufman-type broad ion source, which came to be used not only in aerospace, but also widely across the electrical and electronics industries as an ion source for ion beam etching and ion beam sputtering.
- Earned a Ph.D. from Colorado State University in 1971
- Served as chair of the Department of Physics at Colorado State University from 1978 until his retirement
- Retired from the university in 1984 and founded Kaufman & Robinson, Inc.
Dr. Kaufman was inducted into the NASA Glenn Research Center Hall of Fame in 2016. NASA recognized the founder of KRI as a trailblazer of ion propulsion, stating that he had “the rare distinction of inventing an experimental spaceflight hardware system that has not only been demonstrated in testing but is being used in space flights today.”
Ion Source Types and Features
KRI ion sources can be selected according to the application and the required process environment.
End-Hall Ion Sources
| Uses | Ideal for ultra-high voltage, high-current ion beam processes such as IAD and pre-cleaning. Enables low-damage etching, cleaning, and ion-assisted deposition. |
|---|---|
| Features | High-current assisted effect improves the optical properties. HCES enables extended oxygen beam-assisted irradiation. Water cooling supports low-temperature deposition processes, and retrofit installation on existing system is straightforward. |
| Industries Used | Optics, laser facets, optical communication filters, and quantum devices. |
Gridded Ion Sources
| Uses | Used for etching, sputtering, and pre-cleaning applications. Used for high-quality optical film deposition and etching (milling) of magnetic materials and metal films. |
|---|---|
| Features | Plasma is confined within the ion source, achieving low contamination and an operating vacuum in the 10⁻²Pa range. Plasma discharge mode can be selected as DC or RF. |
Gridded RF Ion Sources
| Model | RFICP40 | RFICP100 | RFICP140 | RFICP220 | RFICP380 |
|---|---|---|---|---|---|
| Beam Current (mA) | >100 | >350 | >600 | >800 | >1,000 |
| Beam Voltage (V) | 100~1200 | 100~1200 | 100~1200 | 100~1200 | 100~1200 |
| Beam Output Diameter | 4cmφ | 10cmφ | 14cmφ | 20cmφ | 38cmφ |
| Length (cm) | 12.7 | 23.5 | 24.6 | 30 | 39 |
| Outer Diameter (cm) | 13.5 | 19.1 | 24.6 | 41 | 59 |
| Mounting Flange | 8″CF | 10″CF | 12″CF | 12″CF | 12″CF |
Gridded DC Ion Sources
| Model | KDC10 | KDC40 | KDC75 | KDC100 | KDC160 |
|---|---|---|---|---|---|
| Beam Current (mA) | >10 | >100 | >250 | >400 | >650 |
| Beam Voltage (V) | 100~1200 | 100~1200 | 100~1200 | 100~1200 | 100~1200 |
| Beam Output Diameter | 1cmφ | 4cmφ | 8cmφ | 12cmφ | 16cmφ |
| Length (cm) | 11.5 | 17.1 | 20.1 | 23.5 | 25.2 |
| Outer Diameter (cm) | 4 | 9 | 14 | 19.4 | 23.2 |
| Mounting Flange | 2-3/4″CF | 6″CF | 8″ or 10″CF | 10″ or 12″CF | 12″CF |
KRI DC Power Supplies
DC Power Supply
| Performance | · 3000W power supply for pulsed DC · 0 to 1000V, 10A max |
|---|---|
| Features | · Arc detection in under 100ns, 1μs recovery time · Reverse voltage adjustable up to 150V · Variable operating frequency, ultra-low arc energy |
Non-Pulsed DC Power Supply
| Performance | · Up to 1500W power supply for pulsed DC · 0 to 1000V, 4A max |
|---|---|
| Features | · Arc detection in under 200ns, 1μs recovery time · Superior arc detection performance · Ultra-low arc energy |
Electron Sources
We offer electron sources that complement ion beam processes.
These system are designed for electron emission.
Electron Sources
| Performance and Industries Used | · Ion engine development · MPD thruster development · Mountable on all ion source types |
|---|---|
| Type | · Hollow cathode type · Built-in filament type · RF type |
| Product | SHC1000 (selective uses) |
MHC1000 | LHC1000 | LFN2000 |
|---|---|---|---|---|
| Type | Hollow cathode | Hollow cathode | Hollow cathode | Low AC Frequency |
| Plasma coupling | Yes | Yes | Yes | Yes |
| IE max | 5A | 10A | 20A | 1A |
| VB | < 50eV | < 50eV | < 50eV | < 50eV |
| Insert life* | 100 to 500 hrs | 200 to 800 hrs | 200 to 1000 hrs | 200 to 600 hrs |
| Typical flows (Ar) | 5-10sccm | 5-10sccm | 5-20sccm | 4-6sccm |
| Width | 1.51” | 2.3” | 2.3” | 2.3” |
| Length | 2.85” | 3.6” | 4.6” | 1.65” |
| Mounting | Internal remote | Internal remote | Internal remote | Internal remote |
| Installations | eH, RFICP, KDC, anode layer, cathodes, thrusters | eH, RFICP, KDC, anode layer, cathodes, thrusters | eH, RFICP, KDC, anode layer, cathodes, thrusters | RFICP, KDC, anode layer, cathodes |
| Process | Etch, Deposition, Space | Etch, Deposition, Space | Etch, Deposition, Space | Etch, Deposition |
*Process Pressure: 2~4 x 10-2Pa
RF Neutralizer
RFN3000
| Output | 2.5A Compatible with oxygen beam environments |
|---|
Maintenance and Support
Our database-driven approach delivers fast, reliable maintenance, earning us the trust of our many customers.
Learn More Inquiry about repairsand maintenance