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KRI Ion Sources

KRI Ion Sources

System Overview

Developed by Dr. Kaufman
KRI Ion Sources for everything from cleaning to thin film deposition

We sell and install KRI ion sources from the United States, developed by Dr. Kaufman. Compatible with a wide range of applications such as cleaning, sputtering, and etching.

KRI Kaufman&robinson Ion Beam Authority

The Kaufman Ion Source and Dr. Harold Kaufman

At the core of our ion beam system is the Kaufman-type ion source, a technology shaped by one of the field’s most influential figures, founder Dr. Harold Kaufman.

Dr. Harold Kaufman

Building on his research at NASA, Dr. Kaufman developed the Kaufman-type broad ion source, which came to be used not only in aerospace, but also widely across the electrical and electronics industries as an ion source for ion beam etching and ion beam sputtering.

Dr. David A. Kaufman
  • Earned a Ph.D. from Colorado State University in 1971
  • Served as chair of the Department of Physics at Colorado State University from 1978 until his retirement
  • Retired from the university in 1984 and founded Kaufman & Robinson, Inc.
Dr. David A. Kaufman

Dr. Kaufman was inducted into the NASA Glenn Research Center Hall of Fame in 2016. NASA recognized the founder of KRI as a trailblazer of ion propulsion, stating that he had “the rare distinction of inventing an experimental spaceflight hardware system that has not only been demonstrated in testing but is being used in space flights today.”

Ion Source Types and Features

KRI ion sources can be selected according to the application and the required process environment.

End-Hall Ion Sources

Uses Ideal for ultra-high voltage, high-current ion beam processes such as IAD and pre-cleaning. Enables low-damage etching, cleaning, and ion-assisted deposition.
Features High-current assisted effect improves the optical properties. HCES enables extended oxygen beam-assisted irradiation. Water cooling supports low-temperature deposition processes, and retrofit installation on existing system is straightforward.
Industries Used Optics, laser facets, optical communication filters, and quantum devices.

Gridded Ion Sources

Uses Used for etching, sputtering, and pre-cleaning applications. Used for high-quality optical film deposition and etching (milling) of magnetic materials and metal films.
Features Plasma is confined within the ion source, achieving low contamination and an operating vacuum in the 10⁻²Pa range. Plasma discharge mode can be selected as DC or RF.

Gridded RF Ion Sources

Model RFICP40 RFICP100 RFICP140 RFICP220 RFICP380
Beam Current (mA) >100 >350 >600 >800 >1,000
Beam Voltage (V) 100~1200 100~1200 100~1200 100~1200 100~1200
Beam Output Diameter 4cmφ 10cmφ 14cmφ 20cmφ 38cmφ
Length (cm) 12.7 23.5 24.6 30 39
Outer Diameter (cm) 13.5 19.1 24.6 41 59
Mounting Flange 8″CF 10″CF 12″CF 12″CF 12″CF

Gridded DC Ion Sources

Model KDC10 KDC40 KDC75 KDC100 KDC160
Beam Current (mA) >10 >100 >250 >400 >650
Beam Voltage (V) 100~1200 100~1200 100~1200 100~1200 100~1200
Beam Output Diameter 1cmφ 4cmφ 8cmφ 12cmφ 16cmφ
Length (cm) 11.5 17.1 20.1 23.5 25.2
Outer Diameter (cm) 4 9 14 19.4 23.2
Mounting Flange 2-3/4″CF 6″CF 8″ or 10″CF 10″ or 12″CF 12″CF

KRI DC Power Supplies

DC Power Supply

Performance · 3000W power supply for pulsed DC
· 0 to 1000V, 10A max
Features · Arc detection in under 100ns, 1μs recovery time
· Reverse voltage adjustable up to 150V
· Variable operating frequency, ultra-low arc energy

Non-Pulsed DC Power Supply

Performance · Up to 1500W power supply for pulsed DC
· 0 to 1000V, 4A max
Features · Arc detection in under 200ns, 1μs recovery time
· Superior arc detection performance
· Ultra-low arc energy

Electron Sources

We offer electron sources that complement ion beam processes.
These system are designed for electron emission.

Electron Sources

Performance and Industries Used · Ion engine development
· MPD thruster development
· Mountable on all ion source types
Type · Hollow cathode type
· Built-in filament type
· RF type
Product SHC1000
(selective uses)
MHC1000 LHC1000 LFN2000
Type Hollow cathode Hollow cathode Hollow cathode Low AC Frequency
Plasma coupling Yes Yes Yes Yes
IE max 5A 10A 20A 1A
VB < 50eV < 50eV < 50eV < 50eV
Insert life* 100 to 500 hrs 200 to 800 hrs 200 to 1000 hrs 200 to 600 hrs
Typical flows (Ar) 5-10sccm 5-10sccm 5-20sccm 4-6sccm
Width 1.51” 2.3” 2.3” 2.3”
Length 2.85” 3.6” 4.6” 1.65”
Mounting Internal remote Internal remote Internal remote Internal remote
Installations eH, RFICP, KDC, anode layer, cathodes, thrusters eH, RFICP, KDC, anode layer, cathodes, thrusters eH, RFICP, KDC, anode layer, cathodes, thrusters RFICP, KDC, anode layer, cathodes
Process Etch, Deposition, Space Etch, Deposition, Space Etch, Deposition, Space Etch, Deposition

*Process Pressure: 2~4 x 10-2Pa

RF Neutralizer
RFN3000

Output 2.5A
Compatible with oxygen beam environments

Maintenance and Support

Our database-driven approach delivers fast, reliable maintenance, earning us the trust of our many customers.

Learn More Inquiry about repairs
and maintenance

CONTACT

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