PRODUCTS
Ion Beam Etching/Milling system
Ion Beam Etching/Milling system
System Overview
Ion Beam Etching system (IBE system)
Custom IBE system for Ultra-Fine and Taper Processing
This system uses DC or RF ion sources and is equipped with a single rotating, cooled substrate stage for ion beam etching/milling (IBE/IBM). Its compact design combines excellent operability with high expandability.
Applications and Industries Used
Uses
Sensors, SAW devices, thin film magnetic heads, MEMS, electron microscopy sample preparation, and more
Industries Used
R&D, prototyping, and low-volume production
System Features
High Processing Performance with Low-Temperature, Clean Processing
Processes materials such as Au, Pt, and magnetic materials that are difficult to fine-etch.
Capable of processing at substrate surface temperatures below 100°C.
No toxic gases are used, eliminating the need for exhaust gas treatment and ensuring a clean process.
Taper processing and angled irradiation milling are easily performed, offering flexible processing capabilities.
Flexible System Configuration and Options
Ion Source for Etching
Can select DC or RF ion sources. Beam diameters available from 3cm to 36cm. Capable of processing at substrate surface temperatures below 100°C.
Vacuum Chamber
Batch-type or LL(load-lock) configuration selectable.
Stage
Single or planetary (rotation/revolution) configuration selectable. Water cooling system, rotation/revolution, variable angle of incidence, and compatible with irregular substrates.
Exhaust System
Main exhaust: TMP or Cryochiller. Roughing: dry pump or rotary pump.
Operation and Process Control
All components are housed within a space-saving frame.
Easy operation achieved through LCD touch panel and PLC control.
Recipe settings available for automatic exhaust, process automation, and more.
Error display and data logging functions support stable process control.
Endpoint detection (optical or Q-mass type) can be installed.
Standard Specifications
| Compatible Substrates | Up to 4 inches φ |
|---|---|
| Substrate Stage | Variable rotation and angle of incidence (0 to ±90°) |
| Stage Cooling | Dry chuck, air-cooled chiller |
| Ion Source | KRI Kaufman ion source (KDC40), made in the USA |
| Beam Specifications | Beam voltage 100 – 1200V, current up to 100mA |
| Grid | Self-aligning TMMo 2-piece 4cm grid |
| Vacuum Exhaust System | From atmospheric pressure to the 10⁻⁴Pa range within 30 minutes (standard configuration includes turbomolecular pump, RP, wide-range vacuum gauge, and gate valve-free design) |
| Chamber | SUS, φ410mm × L280mm, with viewport |
| Control System | 7-inch touch panel with PLC control |
| Dimensions and Weight | 780mm (W) × 950mm (L) × 1700mm (H) or less, appx. 500kg |
Options
Grid types (Mo, carbon, divergent, convergent, and collimated)
Etch uniformity improvement (KDC75) and various neutralizers
Upgrade to ion beam sputtering (IBS) system
Addition of a gate valve, conversion to a dry pump
Endpoint detection (optical or Q-mass type)
*The K Series and L Series are also available, featuring multi-substrate processing (rotation/revolution stage) and a simplified LL mechanism.
Required Specifications
3-phase AC200V, 15A
Ar gas (for processing)
N₂ gas (for chamber venting)
Compressed air (for valve actuation)
